c,mar,2012 digital transistors (built-in resistors) dtc114em/dtc114ee/dtc114eua dtc114eka /dtc114eca/DTC114ESA equivalent circuit digital transistor (npn) features ? built-in bias resistors enable the c onfiguration of an inverter circuit without connecting external input re sistors(see equivalent circuit) ? the bias resistors consist of thin-f ilm resistors with complete isolation to allow positive biasing of the i nput.they also have the advantage of almost completely eliminating parasitic effects ? only the on/off conditions need to be se t for operation, making device design easy pin connenctions and marking dtc114em sot-723 1. in 2. gnd 3. out marking:24 dtc114ee sot-523 1. in 2. gnd 3. out marking:24 dtc114eua sot-323 1. in 2. gnd 3. out marking:24 dtc114eka sot-23-3l 1. in 2. gnd 3. out marking:24 dtc114eca sot-23 1. in 2. gnd 3. out marking:24 DTC114ESA to-92s 1. gnd 2. out 3. in ? 2012-05 willas electronic corp.
c,mar,2012 maximum ratings(ta=25 unless otherwise noted) limits(dtc114e ) symbol parameter m e ua ka ca sa unit v cc supply voltage 50 v v in input voltage -10 +40 v i o output current 50 ma i cm peak collector current 100 ma p d power dissipation 100 150 200 300 mw t j junction temperature 150 t stg storage temperature -55 +150 electrical characteristics (ta=25 unless otherwise specified) parameter symbol conditions min typ max unit v i(off) v cc =5v,i o =100a 0.5 v input voltage v i(on) v o =0.3v,i o =10ma 3 v output voltage v o(on) i o /i i =10ma/0.5ma 0.3 v input current i i v i =5v 0.88 ma output current i o(off) v cc =50v,v i =0 0.5 a dc current gain g i v o =5v,i o =5ma 30 input resistance r 1 7 10 13 k ? resistance ratio r 2 /r 1 0.8 1 1.2 transition frequency f t v o =10v,i o =5ma,f=100mhz 250 mhz 201205
0.1 1 10 100 0.1 1 10 100 11 01 0 0 0.01 0.1 1 0481 21 62 0 0 2 4 6 8 10 0.1 1 10 100 1 10 100 1000 0 . 00 . 40 . 81 . 21 . 62 . 0 0.01 0.1 1 10 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 400 30 3 0.03 0.3 300 30 3 30 3 0.3 3 0.03 0.3 30 3 30 0.3 3 0.3 off characteristics on characteristics t a =25 100 v o =0.3v input voltage v i(on) (v) output current i o (ma) v o(on) ?? i o t a =100 25 i o /i i =20 output voltage v o(on) (v) output current i o (ma) f=1mhz t a =25 c o ?? v r output capacitance c o (pf) reverse bias voltage v r (v) g i ?? i o t a =100 25 v o =5v dc current gain g i output current i o (ma) t a =100 25 v cc =5v output current i o (ma) input voltage v i(off) (v) dtc114exx typical characteristics p d ?? t a DTC114ESA dtc114eua/ka/ca dtc114ee dtc114em power dissipation p d (mw) ambient temperature t a ( ) 2012-05 willas electronic corp.
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